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WNM2077 - MOSFET

General Description

The WNM2077 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-723.

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Datasheet Details

Part number WNM2077
Manufacturer WillSEMI
File Size 951.99 KB
Description MOSFET
Datasheet download datasheet WNM2077 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM2077 WNM2077 Single N-Channel, 20V, 0.54A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.420@ VGS=4.5V 0.580@ VGS=2.5V 0.840@ VGS=1.8V ESD Protected Descriptions The WNM2077 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2077 is Pb-free. Features ● Trench Technology ● Supper high density cell design ● Excellent ON resistance for higher DC current ● Extremely Low Threshold Voltage ● Small package SOT-723 Applications ● Driver for Relay, Solenoid, Motor, LED etc. ● DC-DC converter circuit ● Power Switch ● Load Switch ● Charging Will Semiconductor Ltd. 1 Http//:www.willsemi.