WNMD2176
Description
The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit. Standard Product WNMD2176 is Pb-free.
Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package SOT-23-6L
