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WNMD2178 - MOSFET

General Description

The WNMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package DFN2X2-4L 34 2 1 Bottom View DFN2X2-4L 43 S2 G2 2178 NDYW S1 G1 12 4: Source 2 3: Gate 2 1: Source 1 2: Gate 1 2178 = Device Code N D =Special Code.

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Datasheet Details

Part number WNMD2178
Manufacturer WillSEMI
File Size 1.51 MB
Description MOSFET
Datasheet download datasheet WNMD2178 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (mΩ) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 26@ VGS=3.1V 29@ VGS=2.5V ESD Rating:2000V HBM Descriptions The WNMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The WNMD2178 is available in DFN2X2-4L package. Standard Product WNMD2178 is Pb-free and Halogen-free.