WPM2065 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- HBM ESD protection > 4kV
- Small package DFN2X2-6L
- Part: WPM2065
- Manufacturer: WillSEMI
- Size: 254.94 KB
Related WillSEMI Datasheets
| Part Number | Description |
|---|---|
| WPM2065A | Single P-Channel Power MOSFET |
| WPM2005 | Power MOSFET and Schottky Diode |
| WPM2005B | Power MOSFET and Schottky Diode |
| WPM2006 | Power MOSFET and Schottky Diode |
| WPM2009D | P-MOSFET |
WPM2065 Description
WPM2065 Single P-Channel, -20V, -6.9A, Power MOSFET VDS (V) Typical Rds(on) (Ω) 0.017@ VGS=-4.5V -20 0.022@ VGS=-2.5V 0.032@ VGS=-1.8V ESD Rating: 4000V HBM Descriptions The WPM2065 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
WPM2065 Applications
- Driver for Relay, Solenoid, Motor, LED etc