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WPM2065 - MOSFET

Description

The WPM2065 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • HBM ESD protection > 4kV.
  • Small package DFN2X2-6L.

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Datasheet Details

Part number WPM2065
Manufacturer WillSEMI
File Size 254.94 KB
Description MOSFET
Datasheet download datasheet WPM2065 Datasheet

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Full PDF Text Transcription

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WPM2065 Single P-Channel, -20V, -6.9A, Power MOSFET VDS (V) Typical Rds(on) (Ω) 0.017@ VGS=-4.5V -20 0.022@ VGS=-2.5V 0.032@ VGS=-1.8V ESD Rating: 4000V HBM Descriptions The WPM2065 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2065 is Pb-free and Halogen-free. WPM2065 Http://www.sh-willsemi.
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