WPM2065A Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- ESD protection
- Small package DFN2x2-6L
- Part: WPM2065A
- Manufacturer: WillSEMI
- Size: 1.48 MB
Related WillSEMI Datasheets
| Part Number | Description |
|---|---|
| WPM2065 | MOSFET |
| WPM2005 | Power MOSFET and Schottky Diode |
| WPM2005B | Power MOSFET and Schottky Diode |
| WPM2006 | Power MOSFET and Schottky Diode |
| WPM2009D | P-MOSFET |
WPM2065A Description
WPM2065A Single P-Channel, -20V, -9.4A, Power MOSFET VDS (V) Max. RDS(on) (mΩ) 21 @ VGS=-4.5V -20 28 @ VGS=-2.5V 43 @ VGS=-1.8V ESD Rating: 2000V HBM Descriptions The WPM2065A is P-Channel enhancement MOS Field Effect Transistor.