Datasheet4U Logo Datasheet4U.com

WPM3012 - MOSFET

Description

The WPM3012 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 3 W32.
  • 12 W32= Device Code.
  • = Month (A~Z) Marking.

📥 Download Datasheet

Datasheet Details

Part number WPM3012
Manufacturer WillSEMI
File Size 114.95 KB
Description MOSFET
Datasheet download datasheet WPM3012 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WPM3401 P-Channel Enhancement Mode MOSFET JESTEK
WPM04-2045A 4Watts POWER AMPLIFIER WanTcom
WPM1480 P-Channel MOSFET Will Semiconductor
WPM1483 P-Channel MOSFET Will Semiconductor
WPM1485 P-Channel MOSFET Will Semiconductor

Other Datasheets by WillSEMI

Part Number Description
WPM3015 MOSFET
WPM3004 MOSFET
WPM3005 MOSFET
WPM3021 MOSFET
WPM3022 MOSFET

Full PDF Text Transcription

Click to expand full text
WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.058@ VGS=10V 0.080@ VGS=4.5V Descriptions The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3012 is Pb-free and Halogen-free. WPM3012 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 3 W32* 12 W32= Device Code * = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc.
Published: |