WPM3015 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package TSOT-23-3L
- Part: WPM3015
- Manufacturer: WillSEMI
- Size: 1.13 MB
Related WillSEMI Datasheets
| Part Number | Description |
|---|---|
| WPM3012 | MOSFET |
| WPM3004 | MOSFET |
| WPM3005 | MOSFET |
| WPM3021 | MOSFET |
| WPM3022 | MOSFET |
WPM3015 Description
WPM3015 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Typical Rds(on)(Ω ) 0.063@ VGS=-10V 0.091@ VGS=-4.5V WPM3015 .sh-willsemi. Descriptions The WPM3015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.