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WPM3021 - MOSFET

Description

The WPM3021 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOP-8L WPM3021 Http://www. sh-willsemi. com (4) (3) (2) (1) SOP-8L DD 87 DD 65 12 SS 34 SG Pin configuration (Top view).

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Datasheet Details

Part number WPM3021
Manufacturer WillSEMI
File Size 854.90 KB
Description MOSFET
Datasheet download datasheet WPM3021 Datasheet

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Full PDF Text Transcription

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WPM3021 Single P-Channel, -30V, -11.5A, Power MOSFET VDS (V) -30 Typical RDS(on) (mΩ) 11@ VGS=-10V 15@VGS=-5V Descriptions The WPM3021 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3021 is Pb-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOP-8L WPM3021 Http://www.sh-willsemi.
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