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WPM3023 - MOSFET

Description

The WPM3023 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • SOT-23 D 3 12 GS Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23.

📥 Download Datasheet

Datasheet Details

Part number WPM3023
Manufacturer WillSEMI
File Size 1.02 MB
Description MOSFET
Datasheet download datasheet WPM3023 Datasheet

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Full PDF Text Transcription

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WPM3023 Single P-Channel, -30V, -3.9A, Power MOSFET VDS (V) -30 Typical RDS(on) (mΩ) 37 @ VGS=-10V 50 @ VGS=-4.5V WPM3023 Http://www.sh-willsemi.com Descriptions The WPM3023 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3023 is Pb-free.
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