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WPM6205 - MOSFET

Description

The WPM6205 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • SOT-23-3L D 3 12 GS Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23-3L.

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Datasheet Details

Part number WPM6205
Manufacturer WillSEMI
File Size 827.25 KB
Description MOSFET
Datasheet download datasheet WPM6205 Datasheet

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Full PDF Text Transcription

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WPM6205 Single P-Channel, -20V, -4.8A, Power MOSFET WPM6205 Http://www.sh-willsemi.com VDS (V) -20 Typical RDS(on) (mΩ) 33@ VGS=-4.5V 44@ VGS=-2.5V 65@ VGS=-1.8V Descriptions The WPM6205 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM6205 is Pb-free.
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