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WPM6207 - MOSFET

Description

The WPM6207 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23-3.

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Datasheet Details

Part number WPM6207
Manufacturer WillSEMI
File Size 768.88 KB
Description MOSFET
Datasheet download datasheet WPM6207 Datasheet

Full PDF Text Transcription

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WPM6207 Single P-Channel, -20V, -5.7A, Power MOSFET VDS (V) -20 Max Rds(on) (mĪ©) 30@ VGS=–4.5V 40@ VGS=–2.5V 60@ VGS=–1.8V Descriptions The WPM6207 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM6207 is Pb-free. WPM6207 www.sh-willsemi.
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