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WSB5539N - Schottky Barrier Diode

Features

  • WSB5539N Http://www. willsemi. com.
  • Low forward voltage.
  • 0.5A Average rectified forward current.
  • Peak forward current tested.
  • Standard products are Pb-free and Halogen-free DFN1006-2L Circuit Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 0.5 3 150 -40 ~ 8.

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Datasheet Details

Part number WSB5539N
Manufacturer WillSEMI
File Size 340.89 KB
Description Schottky Barrier Diode
Datasheet download datasheet WSB5539N Datasheet

Full PDF Text Transcription

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WSB5539N 0.5A, Schottky Barrier Diode Features WSB5539N Http://www.willsemi.com  Low forward voltage  0.5A Average rectified forward current  Peak forward current tested  Standard products are Pb-free and Halogen-free DFN1006-2L Circuit Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 0.5 3 150 -40 ~ 85 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage Reverse current Junction capacitance Thermal resistance VF IR CJ Rθ(j-a) IF=0.5A VR=40V VR=4V, F=1MHz Junction to ambient Min.
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