WSB5539N
WSB5539N is Schottky Barrier Diode manufactured by WillSEMI.
Features
Http://.willsemi.
- Low forward voltage
- 0.5A Average rectified forward current
- Peak forward current tested
- Standard products are Pb-free and Halogen-free
DFN1006-2L Circuit
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature
Symbol VRM VR IO IFSM TJ Topr Tstg
Marking
Value 40 40 0.5 3 150
-40 ~ 85 -55 ~ 150
Unit V V A A OC OC OC
Electronics characteristics (TA=25o C)
Parameter
Symbol
Condition
Forward voltage Reverse current Junction capacitance Thermal resistance
VF IR CJ Rθ(j-a)
IF=0.5A VR=40V VR=4V, F=1MHz Junction to ambient
Min.
- Order Informations
Device WSB5539N-2/TR
Package DFN1006-2L
Marking C- (2)
Note 1 : Pulse Width=8.3ms, Single Pulse Note 2 :
- = Month code (A~Z); C = Device code
Typ. 0.53
3 20
Max. 0.63...
