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W29EE011 - 128K x 8 CMOS FLASH MEMORY

Datasheet Summary

Description

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits.

The device can be programmed and erased in-system with a standard 5V power supply.

A 12-volt VPP is not required.

Features

  • Single 5-volt program and erase operations.
  • Fast page-write operations.
  • 128 bytes per page.
  • Page program cycle: 10 mS (max. ).
  • Effective byte-program cycle time: 39 µS.
  • Optional software-protected data write.
  • Fast chip-erase operation: 50 mS.
  • Read access time: 90/150 nS.
  • Page program/erase cycles: 1K/10K.
  • Ten-year data retention.
  • Software and hardware data protection.
  • Low power consumptio.

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Datasheet preview – W29EE011

Datasheet Details

Part number W29EE011
Manufacturer Winbond
File Size 177.00 KB
Description 128K x 8 CMOS FLASH MEMORY
Datasheet download datasheet W29EE011 Datasheet
Additional preview pages of the W29EE011 datasheet.

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W29EE011 128K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • Single 5-volt program and erase operations • Fast page-write operations − 128 bytes per page − Page program cycle: 10 mS (max.
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