Datasheet4U Logo Datasheet4U.com

W29EE012 - 128K x 8 CMOS FLASH MEMORY

Datasheet Summary

Description

The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits.

The device can be programmed and erased in-system with a standard 5V power supply.

A 12-volt VPP is not required.

Features

  • Single 5-volt program and erase operations.
  • Fast page-write operations.
  • 128 bytes per page.
  • Page program cycle: 10 mS (max. ).
  • Effective byte-program cycle time: 39 µS.
  • Optional software-protected data write.
  • Fast chip-erase operation: 50 mS.
  • Page program/erase cycles: 1,000.
  • Ten-year data retention.
  • Software and hardware data protection.
  • Low power consumption.
  • Active current: 25 mA (typ.

📥 Download Datasheet

Datasheet preview – W29EE012

Datasheet Details

Part number W29EE012
Manufacturer Winbond
File Size 239.61 KB
Description 128K x 8 CMOS FLASH MEMORY
Datasheet download datasheet W29EE012 Datasheet
Additional preview pages of the W29EE012 datasheet.

📁 Similar Datasheet

  • W2911 - (W29xx) Oscillator (MF Electronics)
  • W2912 - (W29xx) Oscillator (MF Electronics)
  • W2913 - (W29xx) Oscillator (MF Electronics)
  • W2958NC280 - Rectifier Diode (IXYS)
  • W2958NC300 - Rectifier Diode (IXYS)
  • W2958NC320 - Rectifier Diode (IXYS)
  • W2971 - (W29xx) Oscillator (MF Electronics)
  • W2972 - (W29xx) Oscillator (MF Electronics)
  • W2973 - (W29xx) Oscillator (MF Electronics)
  • W29NK50Z - N-CHANNEL SuperMESH MOSFET (STMicroelectronics)
Other Datasheets by Winbond

Full PDF Text Transcription

Click to expand full text
W29EE012 128K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • Single 5-volt program and erase operations • Fast page-write operations − 128 bytes per page − Page program cycle: 10 mS (max.
Published: |