W29N08GV
W29N08GV is NAND FLASH MEMORY manufactured by Winbond.
2 chip stack 8G-Bit
W29N08GV NAND FLASH MEMORY
Release Date: August 26th 2016
- Revision A
1. GENERAL DESCRIPTION
The W29N08GV (8G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25m A and 10u A for CMOS standby current.
The memory array totals 1,107,296bytes, and organized into 8,192 erasable blocks. Each block consists of 64 programmable pages of 2,112-bytes (1056 words) each. Each page consists of 2,048-bytes (1024 words) for the main data storage area and 64-bytes (32words) for the spare data area (The spare area is typically used for error management functions).
The W29N08GV is double chip stack of W29N04GV. Then, this document shows specified Features
, functions of W29N08GV. Detail functions, mands operation, AC, DC characteristics and restrictions refer to W29N04GV datasheet.
Release Date: August 26th 2016
- Revision A
2. PACKAGE TYPES AND PIN CONFIGURATIONS
2.1 W29N08GVSIAA Pin assignment 48-pin TSOP1
X8
N.C
N.C
N.C
N.C
N.C
N.C
RY/#BY
#RE
#CE
N.C 10
N.C 11
Vcc
Vss
N.C
N.C
#WE...
