W29N08GZ Datasheet | Winbond

W29N08GW/Zx IBA 2 CHIP STACKED 8G-BIT W29N08GW/Zx IBA 8G-BIT 1.8V NAND FLASH MEMORY Release Date: January 7th, 2019 Revision B W29N08GW/Zx IBA 1. GENERAL DESCRIPTION The W29N08GW/Z (8G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 1.7V to 1.95V power supply with active current consumption as low as 13m A at 1.8V and 20u A for CMOS standby current. The memory array totals 1,107,296,256 bytes, and organized into 8,192 erasable blocks of 135,168 bytes (67,584 words). Each block consists of 64 programmable pages of 2,112-bytes (1056 words) each. Each page consists of 2,048-bytes (1024 words) for the main data storage area and 64-bytes (32words) for the spare data area (The spare area is typically used for error management functions). The W29N08GW/Z supports the standard NAND flash memory interface using the multiplexed 8-bit (16bit) bus to transfer data, addresses, and mand instructions. The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status. 2. Features - Basic Features - Density : 8Gbit (2 chip stacked solution) - Vcc : 1.7V to 1.95V - Bus width : x8/x16 - Operating temperature - Industrial: -40°C to 85°C - Single-Level Cell (SLC) technology. - Organization - Density: 8G-bit/1G-byte - Page size - 2,112 bytes (2048 + 64 bytes) - 1,056 words (1024 + 32 words) - Block size - 64 pages (128K + 4K bytes) - 64 pages (64K + 2K words) - Highest Performance - Read performance (Max.) - Random read: 25us - Sequential read cycle:...