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W55FXX - SERIAL FLASH EEPROM SERIES

Download the W55FXX datasheet PDF. This datasheet also covers the W55 variant, as both devices belong to the same serial flash eeprom series family and are provided as variant models within a single manufacturer datasheet.

Description

The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell TM of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeech series.

The single voltage supply eliminates the need for an extra pump circuit during programming and erasing.

Features

  • Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeechTM series 512K/1M/2M memory sizes available Directly cascadable for longer duration Fast frame-write operation.
  • Frame (32 bits) program cycle time: 400 µS (typ. ) Fast whole-chip-erase duration: 50 mS (max. ) Read data access time: 500 nS (max. ) Program/erase cycles: 10,000 (typ. ) Data retention: 10 years (typ. ) Low power consumption:.
  • Operating: 5 mA (typ. ).
  • Sta.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (W55-FXX.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number W55FXX
Manufacturer Winbond
File Size 75.36 KB
Description SERIAL FLASH EEPROM SERIES
Datasheet download datasheet W55FXX Datasheet

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Other Datasheets by Winbond

Part Number Description
W55F01 Serial Flash Memory
W55F01B Serial Flash Memory
W55F05 SERIAL FLASH EEPROM SERIES
W55F05B Serial Flash Memory
W55F10 SERIAL FLASH EEPROM SERIES

Full PDF Text Transcription

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W55FXX SERIAL FLASH EEPROM SERIES GENERAL DESCRIPTION The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell TM of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeech series. The single voltage supply eliminates the need for an extra pump circuit during programming and erasing. FEATURES • • • • Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeechTM series 512K/1M/2M memory sizes available Directly cascadable for longer duration Fast frame-write operation − Frame (32 bits) program cycle time: 400 µS (typ.) Fast whole-chip-erase duration: 50 mS (max.) Read data access time: 500 nS (max.) Program/erase cycles: 10,000 (typ.) Data retention: 10 years (typ.) Low power consumption: − Operating: 5 mA (typ.
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