PFB10N80A - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (Typ. ) @VGS=10V.

PFB10N80A n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFB10N80A
Manufacturer	Wing On
File Size	763.43 KB
Description	N-Channel MOSFET
Datasheet	PFB10N80A Datasheet

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Full PDF Text Transcription (Reference)

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PFI10N80A / PFB10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFI10N80A/PFB10N80A 750V N-Channel MOSFET BVDSS = 750 V RDS(on) = 1.15 Ω ID = 8.0 A I2-PAK 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source D2-PAK 2 1 3 1.Gate 2. Drain 3.