Datasheet4U Logo Datasheet4U.com

PFB10N80A - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (Typ. ) @VGS=10V.

📥 Download Datasheet

Datasheet preview – PFB10N80A

Datasheet Details

Part number PFB10N80A
Manufacturer Wing On
File Size 763.43 KB
Description N-Channel MOSFET
Datasheet download datasheet PFB10N80A Datasheet
Additional preview pages of the PFB10N80A datasheet.

📁 Similar Datasheet

  • PFB2N60 - N-Channel MOSFET (Pyramis Corporation)
  • PFB3L200 - MOS Schottky Rectifier (PFC Device Corporation)
  • PFB3L40 - MOS Schottky Rectifier (PFC Device Corporation)
  • PFB3M40 - MOS Schottky Rectifier (PFC Device Corporation)
  • PFB455JR - FILTERS (Murata Electronics)
  • PFB6000 - N-CHANNEL TRENCH MOSFET (ETC)
Other Datasheets by Wing On

Full PDF Text Transcription

Click to expand full text
PFI10N80A / PFB10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFI10N80A/PFB10N80A 750V N-Channel MOSFET BVDSS = 750 V RDS(on) = 1.15 Ω ID = 8.0 A I2-PAK 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source D2-PAK 2 1 3 1.Gate 2. Drain 3.
Published: |