Wing On PFD2N65
N-Channel MOSFET
| Part No. | PFD2N65 |
|---|---|
| Datasheet | PFD2N65 Download |
| Manufacturer | Wing On |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● 100% EAS Test
● Rugged Gate Oxide Technology
● Extremely Low Intrinsic Capacitances
● Remarkable Switching Characteristics
● Unequalled Gate Charge : 9.5 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V APPLICATION
● Low power battery chargers
● Switch mode power supply (SMPS)
● DC-AC converters. PFU2N65/PFD2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.2 Ω ID = 1.8 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain Gate
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● Source D-PAK(TO-252) 2 1 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current
