PFD3N70HG - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 6.8 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 3.2 Ω (Typ. ) @VGS=10V  Halogen Free.

PFD3N70HG n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFD3N70HG
Manufacturer	Wing On
File Size	1.03 MB
Description	N-Channel MOSFET
Datasheet	PFD3N70HG Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PFD3215	Coupled Chip Inductors	Coilcraft
PFD1617	AC COMMON MODE COIL	Sumida Corporation
PFD2015	Coupled Inductors	Coilcraft
PFD2015-102ME	Coupled Inductors	Coilcraft
PFD2015-103ME	Coupled Inductors	Coilcraft

Other Datasheets by Wing On

Part Number	Description
PFD3N80	N-Channel MOSFET
PFD1N60	N-Channel MOSFET
PFD1N70	N-Channel MOSFET
PFD2N60	N-Channel MOSFET
PFD2N65	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PFU3N70HG / PFD3N70HG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 6.8 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3.2 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. Green Package PFU3N70HG/PFD3N70HG 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 3.2 Ω ID = 2.4 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source D-PAK(TO-252) 2 1 3 1.Gate 2. Drain 3.