PFD3N80 Datasheet | Wing On

FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3.8 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors PFU3N80/PFD3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 4.8 Ω ID = 2.6 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  - ◀▲ - -  Source D-PAK(TO-252) 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note...