PFJ10N80 - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.92 Ω (Typ. ) @VGS=10V.

PFJ10N80 n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFJ10N80
Manufacturer	Wing On
File Size	1.05 MB
Description	N-Channel MOSFET
Datasheet	PFJ10N80 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 2007 PFJ10N80 / PFW10N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.92 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ10N80/PFW10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.15 Ω ID = 10 A TO-247 Drain  Gate  ● ◀▲ ● ●  Source TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3.