PFJ10N80 Datasheet | Wing On

May 2007 PFJ10N80 / PFW10N80 Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.92 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ10N80/PFW10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.15 Ω ID = 10 A TO-247 Drain  Gate  - ◀▲ - -  Source TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3....