PFJ9N90 Datasheet | Wing On

May 2007 PFJ9N90 / PFW9N90 Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ9N90 / PFW9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) = 1.4 Ω ID = 9 A TO-247 Drain  Gate  - ◀▲ - -  Source TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3....