PFJ9N90 - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.12 Ω (Typ. ) @VGS=10V.

PFJ9N90 n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFJ9N90
Manufacturer	Wing On
File Size	1.05 MB
Description	N-Channel MOSFET
Datasheet	PFJ9N90 Datasheet

Other Datasheets by Wing On

Part Number	Description
PFJ10N80	N-Channel MOSFET
PFJ20N50	N-Channel MOSFET
PFJ20N60	N-Channel MOSFET
PFJ60R180	N-Channel Super Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

May 2007 PFJ9N90 / PFW9N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ9N90 / PFW9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) = 1.4 Ω ID = 9 A TO-247 Drain  Gate  ● ◀▲ ● ●  Source TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3.