PFP4N60E Datasheet | Wing On

PFP4N60E / PFF4N60E Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  Pb Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFP4N60E / PFF4N60E 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 2.0 Ω ID = 4.2 A TO-220 Drain  Gate  - ◀▲ - -  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3....