PFP730E - N-Channel MOSFET

Key Features

Originative New Design.
100% EAS Test.
Rugged Gate Oxide Technology.
Extremely Low Intrinsic Capacitances.
Remarkable Switching Characteristics.
Unequalled Gate Charge : 10.5 nC (Typ. ).
Extended Safe Operating Area.
Lower RDS(ON) : 0.7 Ω (Typ. ) @VGS=10V.

PFP730E n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFP730E
Manufacturer	Wing On
File Size	878.70 KB
Description	N-Channel MOSFET
Datasheet	PFP730E Datasheet

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Full PDF Text Transcription (Reference)

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PFP730E / PFF730E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFP730E/PFF730E 400V N-Channel MOSFET BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 6.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.