PFP730E
PFP730E is N-Channel MOSFET manufactured by Wing On.
FEATURES
- Originative New Design
- 100% EAS Test
- Rugged Gate Oxide Technology
- Extremely Low Intrinsic Capacitances
- Remarkable Switching Characteristics
- Unequalled Gate Charge : 10.5 n C (Typ.)
- Extended Safe Operating Area
- Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V
APPLICATION
- Electronic lamp ballasts based on half bridge topology
- PFC (Power Factor Correction)
- SMPS (Switched Mode Power Supplies)
PFP730E/PFF730E
400V N-Channel MOSFET
BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 6.0 A
TO-220
Drain
Gate
- ◀▲
- -
Source
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25o C unless otherwise specified
Symbol
Parameter
PFF730E
VDSS ID
IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25o C)
- Continuous (TC = 100o C)
- Pulsed
(Note...
