Wing On PFP730E
N-Channel MOSFET
FEATURES
● Originative New Design● 100% EAS Test
● Rugged Gate Oxide Technology
● Extremely Low Intrinsic Capacitances
● Remarkable Switching Characteristics
● Unequalled Gate Charge : 10.5 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION
● Electronic lamp ballasts based on half bridge topology
● PFC (Power Factor Correction)
● SMPS (Switched Mode Power Supplies) PFP730E/PFF730E 400V N-Channel MOSFET BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 6.0 A TO-220 Drain Gate
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● Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise specified Symbol Parameter PFP730E PFF730E VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25oC) – Continuous (TC = 100oC) – Pulsed (Note 1) Gate-Source Voltage 400 6.0 6.0* 3.8 3.8* 24 24* ±30 EAS Single Pulse