PFP7N65E - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.35 Ω (Typ. ) @VGS=10V  Halogen Free.

PFP7N65E n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFP7N65E
Manufacturer	Wing On
File Size	1.24 MB
Description	N-Channel MOSFET
Datasheet	PFP7N65E Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PFP7N60	N-channel MOSFET	PowerGate
PFP	DIN Rail Mounting Track	Omron Electronics
PFP13N50	500V N-Channel MOSFET	Power Device
PFP18N50	500V N-Channel MOSFET	Power Device
PFP3205	N-channel Power MOSFET	PowerGate

Other Datasheets by Wing On

Part Number	Description
PFP7N60E	N-Channel MOSFET
PFP7N80	N-Channel MOSFET
PFP7N80E	N-Channel MOSFET
PFP70R590	N-Channel Super Junction MOSFET
PFP70R900	N-Channel Super Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PFP7N65E / PFF7N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.35 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP7N65E / PFF7N65E 650V N-Channel MOSFET BVDSS = 650 V RDS(on) = 1.35 Ω ID = 6.5 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.