PFP7N80E - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.45 Ω (Typ. ) @VGS=10V.

PFP7N80E n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFP7N80E
Manufacturer	Wing On
File Size	926.00 KB
Description	N-Channel MOSFET
Datasheet	PFP7N80E Datasheet

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Full PDF Text Transcription (Reference)

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PFP7N80E / PFF7N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.45 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP7N80E / PFF7N80E 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.45 Ω ID = 6.7 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.