PFW20N50 Datasheet | Wing On

PFJ20N50 / PFW20N50 Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 60 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ20N50 / PFW20N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) = 0.20 Ω ID = 20 A TO-247 Drain  Gate  - ◀▲ - -  Source TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3....