Power Device PFW20N50
500V N-Channel MOSFET
| Part No. | PFW20N50 |
|---|---|
| Datasheet | PFW20N50 Download |
| Manufacturer | Power Device |
| Description | 500V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V APPLICATION High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies) PFW20N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) = 0.25 Ω ID = 20 A TO-247 Drain { Gate {● ◀▲
●
● Source { TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 20...
