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Aug 2006
PFW20N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFW20N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) = 0.25 Ω ID = 20 A
TO-247
Drain {
Gate
{
●
◀▲
● ●
Source
{
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
1 2 3
1.Gate 2. Drain 3.
PFW20N50 Datasheet
