PFW20N50E Datasheet | Wing On

Nov 2010 PFZ20N50E / PFW20N50E Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V PFZ20N50E/PFW20N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain  Gate  - ◀▲ - -  Source APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) TO-247 1 2 3 1.Gate 2. Drain 3. Source TO-3P 1 2 3 1.Gate 2. Drain 3....