Datasheet4U Logo Datasheet4U.com

PFW20N50E - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (Typ. ) @VGS=10V PFZ20N50E/PFW20N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain  Gate .
  • ◀▲.
  •  Source.

📥 Download Datasheet

Datasheet preview – PFW20N50E

Datasheet Details

Part number PFW20N50E
Manufacturer Wing On
File Size 0.97 MB
Description N-Channel MOSFET
Datasheet download datasheet PFW20N50E Datasheet
Additional preview pages of the PFW20N50E datasheet.

📁 Similar Datasheet

  • PFW20N50 - 500V N-Channel MOSFET (Power Device)
  • PFW2500 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2501 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2502 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2503 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2504 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2505 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2506 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW3500 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW3501 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
Other Datasheets by Wing On

Full PDF Text Transcription

Click to expand full text
Nov 2010 PFZ20N50E / PFW20N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V PFZ20N50E/PFW20N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain  Gate  ● ◀▲ ● ●  Source APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) TO-247 1 2 3 1.Gate 2. Drain 3. Source TO-3P 1 2 3 1.Gate 2. Drain 3.
Published: |