PFW20N50E - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (Typ. ) @VGS=10V PFZ20N50E/PFW20N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain  Gate .
◀▲.
 Source.

PFW20N50E n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFW20N50E
Manufacturer	Wing On
File Size	0.97 MB
Description	N-Channel MOSFET
Datasheet	PFW20N50E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Nov 2010 PFZ20N50E / PFW20N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V PFZ20N50E/PFW20N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain  Gate  ● ◀▲ ● ●  Source APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) TO-247 1 2 3 1.Gate 2. Drain 3. Source TO-3P 1 2 3 1.Gate 2. Drain 3.