Wing On PTP13005
NPN Silicon Power Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current(DC) IC Collector Current(Pulse) ICP Base Current IB Collector Dissipation(Tc=25℃) PC Junction Temperature TJ Storage Temperature TSTG 1 2 3 1. Base 2. Collector 3. Emitter 12 3 1. Base 2. Collector 3. Emitter PTP13005 PTF13005 800 400 9 4 8 2 75 30 150 -55~150 UNIT V V V A A A W ℃ ℃ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% VCEO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT ton tstg tF IC=10mA, IB=0 VEB=9V,IC=0 VCE=5V,IC=1A VCE=5V,IC=2A IC=1A,IB=0.2A IC=2A,IB=0.5A IC=4A,IB=1A IC=1A,IB=0.2A IC=2A,IB=0.5A VCB=10V, f=0.1MHz VCE=10V,IC=0.5A Vcc=125V, Ic=2A IB1=0.4A, IB2= -0.4A RL=62.5Ω Min Typ.