PTP13007 Datasheet | Wing On

Aug 2006 NPN Silicon Power Transistor 8.0 Amperes / 80 Watts Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25℃ unless otherwise noted CHARACTERISTICS Collector-Emitter Breakdown Voltage Emitter Cut-off Current - DC Current Gain - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time - Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% SYMBOL VCEO IEBO h FE1 h FE2 VCE(sat) VBE(sat) Cob f T ton tstg t F Test Condition IC=10m A, IB=0 VEB=9V,IC=0 VCE=5V,IC=2A VCE=5V,IC=5A IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A IC=2A,IB=0.4A IC=5A,IB=1A VCB=10V, f=0.1MHz VCE=10V,IC=0.5A Vcc=125V, Ic=5A IB1=1A, IB2= -1A RL=50Ω TO-220 12 3 1. Base 2. Collector 3. Emitter RATING 700 400 9 8 16 4 80 150 -55~150 UNIT V V V A A A W ℃ ℃ Min Typ. Max Unit 1 m...