The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SA940
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
TO-220
! Complementary to 2SC2073
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
Rating
-150 -150 -5 -1.5 25 150 -50~150
Unit
V V V A W °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Collector- Emitter Saturation Voltage Current Gain Bandwidth Product
Symbol
Test Condition
ICBO IEBO hFE
VCE(sat) fT
VCB= -120V , IE=0 VEB= -5V, IC=0 VCE= -10V, IC=-0.5A IC=-0.5 , IB=-50mA VCE= -10V, IC=-0.5A
Min 40
Typ 4
Max
-10 10 75
-1.
A940 Datasheet
