Datasheet Summary
2SC1050
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
TO-3
..
QUICK REFERENCE DATA
SYMBOL
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
CONDITIONS VBE = 0V
Tmb 25 IC = 0.5A; IB = 0.1A IF = 0.5A
MAX 300 250 1 40 1.2 2.0
- UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg...
