The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SD1403
GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
MT-100
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC =4.0A; IB = 1.0A f = 16KHz IF = 5.0A ICsat = 5.0A; f = 16KHz
1.6 0.4
MAX 1500 600 6 12 120 5.0 2.