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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode
APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
300 V 150 V
6V 7A 15 A
IB Base Current-Continuous
Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
2 W
25
150 ℃
-55~150 ℃
isc Product Specification
2SD1404
isc website:www.iscsemi.