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SFTN0825R
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
±30
V
Drain Current
TC = 25℃ TC = 100℃
ID
8 5
A
Peak Drain Current Avalanche energy,single pulse 1)
IDM
16
A
EAS
132
mJ
Avalanche current, single pulse 2)
IAS
2.1
A
Power Dissipation
TC = 25℃
PD
78
W
Operating Junction and Storage Temperature Range
TJ,Tstg
- 50 to 150
℃
Thermal Characteristics
Parameter
Symbol
Max.
Thermal Resistance from Juntion to Ambient 3)
RθJA
55
Thermal Resistance from Juntion to Case
RθJC
1) L= 60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C.
SFTN0825R Datasheet
