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SFTN0865
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage Drain Current 1)
Drain Current - Pulsed 1)
VGS
± 30
V
TC = 25℃ TC = 100℃
ID
8 5
A
IDM
18
A
Power Dissipation
Ptot
40.3
W
Operating Junction Temperature
Tj
150
℃
Storage Temperature Range
1) Drain current limited by maximum junction temperature.
Tstg
- 55 to + 150
℃
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Max. 3.1 62.
SFTN0865 Datasheet
