SFTN7200MP Description
SFTN7200MP N-Channel Enhancement Mode MOSFET Drain Gate Source 1. Unit - Junction to Ambient 4) t ≤ 10s RθJA - Junction to Ambient 4) 5) Steady-State RθJA 40 ℃/W 75 ℃/W - Junction to Case Steady-State RθJC 2 ℃/W 1) The maximum current rating is limited by bond-wires. 2) Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.