Full PDF Text Transcription for WTI53D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
WTI53D. For precise diagrams, and layout, please refer to the original PDF.
Winsem Technology Corp. High Voltage NPN Transistor WTBV53DM(R) / WTI53D POWER TRANSISTOR TO-126 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 R Pin Definition 1....
View more extracted text
Definition 1. Emitter 2. Collector 3. Base TO-126 R Pin Definition 1. Base 2. Collector 3. Emitter Features • High Voltage • Very High Switch Speed • BVCEO : 400V • BVCBO : 800V • IC : 2.5A • VCE(SAT) : max1V@Ic / IB=1A/ 0.25A • Silicon Triple Diffused Type Application • Electronic Ballasts • Adapter • Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Version A12 Symbol