SFD6113AT Datasheet | Winsemi

Description Silicon P-Channel MOSFET Features - -60V, -13A - RDS(ON) = 90mΩ (Max.) @ VGS = -10V, ID = -10A - Green Device Available - Super Low Gate Charge - Excellent Cd V/dt effect decline - Advanced high cell density Trench technology Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible Power Supply Package Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current note1 IDM EAS PD RθJC Pulsed Drain Current note2 Single Pulsed Avalanche Energy note3 Power Dissipation note4 Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range - Drain current limited by maximum junction temperature TC = 25℃ TC = 100℃ TC = 25℃ Max. -60 ± 20 -13 -8.3 -26 29.8 31.1 4 -55 to +175 Units V V A A A m J W ℃/W ℃ WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS .winsemi. Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 1/8...