Datasheet4U Logo Datasheet4U.com

SFD6113AT - Silicon P-Channel MOSFET

General Description

Silicon P-Channel MOSFET

Key Features

  • -60V, -13A.
  • RDS(ON) = 90mΩ (Max. ) @ VGS = -10V, ID = -10A.
  • Green Device Available.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Advanced high cell density Trench technology.

📥 Download Datasheet

Datasheet Details

Part number SFD6113AT
Manufacturer Winsemi
File Size 638.71 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SFD6113AT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFD6003PT -30A -60V P-CHANNEL MOSFET HiSemicon
SFD601G 6.0 AMPS. Glass Passivated Super Fast Rectifiers Taiwan Semiconductor Company
SFD602G 6.0 AMPS. Glass Passivated Super Fast Rectifiers Taiwan Semiconductor Company
SFD603G 6.0 AMPS. Glass Passivated Super Fast Rectifiers Taiwan Semiconductor Company
SFD604G 6.0 AMPS. Glass Passivated Super Fast Rectifiers Taiwan Semiconductor Company

Other Datasheets by Winsemi

Part Number Description
SFD25N06BT Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SFD6113AT Product Description Silicon P-Channel MOSFET Features • -60V, -13A • RDS(ON) = 90mΩ (Max.