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WBP13005D Datasheet NPN Power Transistor

Manufacturer: Winsemi

Overview: WBP13005D High Voltage Fast -Switching NPN Power Transistor.

Datasheet Details

Part number WBP13005D
Manufacturer Winsemi
File Size 397.35 KB
Description NPN Power Transistor
Datasheet WBP13005D-Winsemi.pdf

General Description

This Device is designed for high Voltage, High speed switching Characteristics required such as lighting system ,switching mode power supply.

Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base peak Current PC Total Dissipation TJ Operation Junction Temperature TSTG Storage Temperature Test conditions VBE=0 IB=0 IC=0 tP=5ms Value 700 400 9.0 4 8 2 4 75 150 -55~150 Units V V V A A A A W ℃ ℃ Thermal characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case RӨJA Thermal Resistance Junction to Ambient Value 3.12 8.9 Units ℃/W ℃/W Rev.A Aug.2011 Copyright@Winsemi Microelectronics Co

Key Features

  • Very High Switching Speed.
  • High Voltage Capability.
  • Wide Reverse Bias SOA.
  • Built-in free wheeling diode General.

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