Winsemi WBP13005D
This Device is designed for high Voltage, High speed switching Characteristics required such as lighting system ,switching mode power supply.FEATURES
Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diodeGENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base peak Current PC Total Dissipation TJ Operation Junction Temperature TSTG Storage Temperature Test conditions VBE=0 IB=0 IC=0 tP=5ms Value 700 400 9.0 4 8 2 4 75 150 -55~150 Units V V V A A A A W ℃ ℃ Thermal characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case RӨJA Thermal Resistance Junction to Ambient Value 3.12 8.9 Units ℃/W ℃/W Rev.A Aug.2011 Copyright@Winsemi Microelectronics Co