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WBP13005D1 Datasheet NPN Power Transistor

Manufacturer: Winsemi

Overview: WBP13005D1 High Voltage Fast-Switching NPN Power Transistor.

Datasheet Details

Part number WBP13005D1
Manufacturer Winsemi
File Size 414.47 KB
Description NPN Power Transistor
Datasheet WBP13005D1-Winsemi.pdf

General Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Absolute Maximum Ratings Symbol Paramete VCES Collector-Emitter Vroltage VCEO VEBO IC ICP IB IBM PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature TSTG Storage Temperature Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms Value 700 400 9.0 4.0 8.0 2.0 4.0 75 1.8 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol Parameter RθJC Thermal Resistanc

Key Features

  • Very High Switching Speed.
  • Minimum Lot-to-Lot hFE Variation.
  • Wide Reverse Bias SOA.
  • Built-in freewheeling diode General.

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