Winsemi WFD830
This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.| Part No. | WFD830 |
|---|---|
| Datasheet | WFD830 Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V● Ultra-low Gate Charge(Typical 32nC)
● Fast Switching Capability
● 100%Avalanche Tested
● Maximum Junction Temperature Range(150℃)
GENERAL DESCRIPTION
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0.38 -55~150 300 W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) (Note 2) (Note 1) (Note 3) (Note1) Parameter Value 500 4.5 2.9 18 ±30 300 7.5 4.5 48 Units V A A A V mJ mJ V/ns W Channel Temperature Thermal Characteristics Symbol RQJC RQJA RQJA Parameter Therm...
