Download WFD830B Datasheet PDF
WFD830B page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor - Features - Drain Current ID= 5A@ TC=25℃ - Drain Source Voltage- : VDSS= 500V(Min) - Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching power supplies,converters,AC and DC motor controls -...