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WFD830B - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFD830B
Manufacturer Winsemi
File Size 452.09 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFD830B Datasheet

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Full PDF Text Transcription

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Free Datasheet http://www.nDatasheet.com WFD830B Silicon N-Channel MOSFET Features � � � � � 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
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