Datasheet Summary
Features
- 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V
- Ultra-low Gate charge(Typical13.3nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor...