WFJ8N65B - Power MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology.

Features

7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V.
Ultra-low Gate charge(Typical 25nC).
Fast Switching Capability.
100%Avalanche Tested.
Isolation Voltage (VISO=4000V AC).
Maximum Junction Temperature Range(150℃) WFJ8N65B Silicon N-Channel MOSFET General.

Winsemi

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Datasheet Details

Part number	WFJ8N65B
Manufacturer	Winsemi
File Size	387.99 KB
Description	Power MOSFET
Datasheet	WFJ8N65B Datasheet
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Features � 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFJ8N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology li ne a electronic lamp ball ast, high efficiency switched mode power suppli es, active power factor correction.

Published: Mar 27, 2017 |