WFJ8N65B Description
This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology li ne a electronic lamp ball ast, high efficiency switched mode power suppli es, active power factor...
WFJ8N65B Key Features
- 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V
- Ultra-low Gate charge(Typical 25nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage (VISO=4000V AC)
- Maximum Junction Temperature Range(150℃)