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WFP70N06T Datasheet Silicon N-channel MOSFET

Manufacturer: Winsemi

Overview: Datasheet pdf - http://..net/ .DataSheet.co.kr N06T WFP70 P70N Silicon N-Channel.

Datasheet Details

Part number WFP70N06T
Manufacturer Winsemi
File Size 671.00 KB
Description Silicon N-Channel MOSFET
Datasheet WFP70N06T_Winsemi.pdf

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products.

Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TJ,Tstg TL 1/8 form Case for 5 seconds Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum Lead Temperature for soldering purpose, 300 (Note2) (Note3) (Note1) Parameter Value 60 68 51 280 ±25 800 7.0 115 0.77 -55~175 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 1.3 62.5 Units ℃/W ℃/W ℃/W Rev.A Oct.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

Datasheet pdf - http://..net/ .DataSheet.co.kr N06T WFP70 P70N Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Symbol IGSS Test Condition VGS=±20V,V DS=0V VDS=48V,V GS=0V Min - Typ - Max ±100 1 Unit nA Drain cut -off current IDSS VDS=48V,V GS=0V,TJ=125℃ 100 60 - µA Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Input capacitance Reverse transf

Key Features

  • 68A,60V, RDS(on)(Max18mΩ)@VGS=10V Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175℃) General.

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