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WFP70N06T - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power manage

Key Features

  • 68A,60V, RDS(on)(Max18mΩ)@VGS=10V Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175℃) General.

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Datasheet Details

Part number WFP70N06T
Manufacturer Winsemi
File Size 671.00 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP70N06T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr N06T WFP70 P70N Silicon N-Channel MOSFET Features � � � � � 68A,60V, RDS(on)(Max18mΩ)@VGS=10V Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products.