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WFP70N06 - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • RDS(on) (Max 0.015 Ω )@VGS=10V Gate Charge (Typical 50nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ◀ { 2. Drain.
  • 1. Gate { ▲.
  • { 3. Source General.

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Datasheet preview – WFP70N06

Datasheet Details

Part number WFP70N06
Manufacturer Wisdom technologies
File Size 788.49 KB
Description N-Channel MOSFET
Datasheet download datasheet WFP70N06 Datasheet
Additional preview pages of the WFP70N06 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Wisdom Semiconductor WFP70N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.015 Ω )@VGS=10V Gate Charge (Typical 50nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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